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| PD - 91790 IRG4BC30W-S INSULATED GATE BIPOLAR TRANSISTOR Features * Designed expressly for Switch-Mode Power Supply and PFC (power factor correction) applications * Industry-benchmark switching losses improve efficiency of all power supply topologies * 50% reduction of Eoff parameter * Low IGBT conduction losses * Latest-generation IGBT design and construction offers tighter parameters distribution, exceptional reliability C VCES = 600V G E VCE(on) typ. = 2.10V @VGE = 15V, IC = 12A n-channel Benefits * Lower switching losses allow more cost-effective operation than power MOSFETs up to 150 kHz ("hard switched" mode) * Of particular benefit to single-ended converters and boost PFC topologies 150W and higher * Low conduction losses and minimal minority-carrier recombination make these an excellent option for resonant mode switching as well (up to >>300 kHz) D 2 Pak Absolute Maximum Ratings Parameter VCES IC @ TC = 25C IC @ TC = 100C ICM ILM VGE EARV PD @ TC = 25C PD @ TC = 100C TJ TSTG Collector-to-Emitter Breakdown Voltage Continuous Collector Current Continuous Collector Current Pulsed Collector Current Clamped Inductive Load Current Gate-to-Emitter Voltage Reverse Voltage Avalanche Energy Maximum Power Dissipation Maximum Power Dissipation Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 600 23 12 92 92 20 180 100 42 -55 to + 150 300 (0.063 in. (1.6mm from case ) Units V A V mJ W C Thermal Resistance Parameter RJC RJA Junction-to-Case Junction-to-Ambient, ( PCB Mounted,steady-state)* Typ. --- --- Max. 1.2 40 Units C/W * When mounted on 1" square PCB (FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. www.irf.com 1 8/13/98 IRG4BC30W-S Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)CES V(BR)ECS V(BR)CES/TJ VCE(ON) VGE(th) VGE(th)/TJ gfe ICES IGES Parameter Min. Typ. Max. Units Conditions Collector-to-Emitter Breakdown Voltage 600 -- -- V VGE = 0V, IC = 250A Emitter-to-Collector Breakdown Voltage 18 -- -- V VGE = 0V, IC = 1.0A Temperature Coeff. of Breakdown Voltage -- 0.34 -- V/C VGE = 0V, IC = 1.0mA -- 2.1 2.7 IC = 12A VGE = 15V Collector-to-Emitter Saturation Voltage -- 2.45 -- IC = 23A See Fig.2, 5 V -- 1.95 -- IC = 12A , TJ = 150C Gate Threshold Voltage 3.0 -- 6.0 VCE = VGE, IC = 250A Temperature Coeff. of Threshold Voltage -- -11 -- mV/C VCE = VGE, IC = 250A Forward Transconductance 11 16 -- S VCE = 100 V, IC = 12A -- -- 250 VGE = 0V, VCE = 600V Zero Gate Voltage Collector Current A -- -- 2.0 VGE = 0V, VCE = 10V, TJ = 25C -- -- 1000 VGE = 0V, VCE = 600V, TJ = 150C Gate-to-Emitter Leakage Current -- -- 100 nA VGE = 20V Switching Characteristics @ TJ = 25C (unless otherwise specified) Qg Qge Qgc td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Ets LE Cies Coes Cres Notes: Parameter Total Gate Charge (turn-on) Gate - Emitter Charge (turn-on) Gate - Collector Charge (turn-on) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Switching Loss Internal Emitter Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Min. -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. 51 7.6 18 25 16 99 67 0.13 0.13 0.26 24 17 150 150 0.55 7.5 980 71 18 Max. Units Conditions 76 IC = 12A 11 nC VCC = 400V See Fig.8 27 VGE = 15V -- -- TJ = 25C ns 150 IC = 12A, VCC = 480V 100 VGE = 15V, RG = 23 -- Energy losses include "tail" -- mJ See Fig. 9, 10, 13, 14 0.35 -- TJ = 150C, -- IC = 12A, VCC = 480V ns -- VGE = 15V, RG = 23 -- Energy losses include "tail" -- mJ See Fig. 11,13, 14 -- nH Measured 5mm from package -- VGE = 0V -- pF VCC = 30V See Fig. 7 -- = 1.0MHz Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) VCC = 80%(VCES), VGE = 20V, L = 10H, RG = 23, (See fig. 13a) Pulse width 80s; duty factor 0.1%. Pulse width 5.0s, single shot. Repetitive rating; pulse width limited by maximum junction temperature. 2 www.irf.com IRG4BC30W-S 5.0 For both: Triangular wave: 4.0 Load C u rren t (A ) Duty cycle: 50% T J = 125C T sink 90C = Gate drive as specified Power Dissipation = 1.75W Clamp voltage: 80% of rated 3.0 Square wave: 60% of rated voltage 2.0 1.0 Ideal diodes 0.0 0.1 1 10 100 A 1000 f, F req uen cy (kH z) Fig. 1 - Typical Load Current vs. Frequency (For square wave, I=I RMS of fundamental; for triangular wave, I=IPK) 100 100 I C , Collector-to-Emitter Current (A) I C , Collector-to-Emitter Current (A) TJ = 150 C 10 TJ = 150 C 10 TJ = 25 C TJ = 25 C 1 1 1 V GE = 15V 20s PULSE WIDTH 10 0.1 5.0 V CC = 50V 5s PULSE WIDTH 6.0 7.0 8.0 9.0 10.0 11.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2 - Typical Output Characteristics Fig. 3 - Typical Transfer Characteristics www.irf.com 3 IRG4BC30W-S M a xim u m D C C o lle c to r C u rre n t (A 25 V GE = 15V 3.0 VGE = 15V 80 us PULSE WIDTH I C = 24 A 20 VCE , Collector-to-Emitter Voltage(V) 2.5 15 I C = 12 A 10 2.0 IC = 6A 5 0 25 50 75 100 125 A 150 1.5 -60 -40 -20 0 20 40 60 80 100 120 140 160 TC , C a s e Te m p e ra tu re (C ) TJ , Junction Temperature ( C) Fig. 4 - Maximum Collector Current vs. Temperature Case Fig. 5 - Collector-to-Emitter Voltage vs. Junction Temperature 10 Thermal Response (Z thJC) 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 SINGLE PULSE (THERMAL RESPONSE) PDM t1 t2 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = PDM x Z thJC + TC 0.001 0.01 0.1 1 0.01 0.00001 0.0001 t1 , Rectangular Pulse Duration (sec) Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com IRG4BC30W-S 2000 VGE , Gate-to-Emitter Voltage (V) VGE = 0V, f = 1MHz Cies = Cge + Cgc , Cce SHORTED Cres = Cgc Coes = Cce + Cgc 20 VCC = 400V I C = 12A 16 1500 C, Capacitance (pF) Cies 1000 12 8 500 Coes Cres 4 0 1 10 100 0 0 10 20 30 40 50 60 VCE , Collector-to-Emitter Voltage (V) QG , Total Gate Charge (nC) Fig. 7 - Typical Capacitance vs. Collector-to-Emitter Voltage Fig. 8 - Typical Gate Charge vs. Gate-to-Emitter Voltage 0.5 Total Switching Losses (mJ) Total Switching Losses (mJ) V CC = 480V V GE = 15V TJ = 25 C 0.4 I C = 12A 10 23 RG = Ohm VGE = 15V VCC = 480V IC = 24 A 1 0.3 IC = 12 A IC = 6A 0.2 0.1 0.1 0.0 0 10 20 30 40 50 0.01 -60 -40 -20 0 20 40 60 80 100 120 140 160 RGR, , Gate Resistance(Ohm) Gate Resistance () G TJ , Junction Temperature ( C ) Fig. 9 - Typical Switching Losses vs. Gate Resistance Fig. 10 - Typical Switching Losses vs. Junction Temperature www.irf.com 5 IRG4BC30W-S 1.5 I C , C ollector-to-E m itter C urrent (A ) Total Switching Losses (mJ) RG TJ VCC VGE 23 = Ohm = 150 C = 480V = 15V 1000 VG E E 2 0V G= T J = 12 5 C 100 1.0 S A FE O P E R A TIN G A R E A 10 0.5 1 0.0 0 5 10 15 20 25 30 0 .1 1 10 100 1000 I C , Collector-to-emitter Current (A) V C E , Collecto r-to-E m itter V oltage (V ) Fig. 11 - Typical Switching Losses vs. Collector-to-Emitter Current Fig. 12 - Turn-Off SOA 6 www.irf.com IRG4BC30W-S L 50V 1 00 0V VC * D .U .T. RL = 0 - 480V 480V 4 X IC@25C 480F 960V * Driver s am e ty pe as D .U .T.; Vc = 80% of V ce (m ax ) * Note: D ue to the 50V pow er s upply, pulse w idth a nd inductor w ill inc rea se to obta in ra ted Id. Fig. 13a - Clamped Inductive Load Test Circuit Fig. 13b - Pulsed Collector Current Test Circuit IC L D river* 50V 1000V * Driver same type as D.U.T., VC = 480V D .U .T. VC Fig. 14a - Switching Loss Test Circuit 9 0% 1 0% 90 % VC t d (o ff) Fig. 14b - Switching Loss Waveforms 10 % IC 5% t d (o n ) tr E on E ts = ( Eo n +E o ff ) tf t=5 s E o ff www.irf.com 7 IRG4BC30W-S D2Pak Package Outline 1 0 .5 4 (.4 1 5 ) 1 0 .2 9 (.4 0 5 ) 1 .4 0 (.0 55 ) M A X. -A2 4 .6 9 (.1 8 5 ) 4 .2 0 (.1 6 5 ) -B1 .3 2 (.0 5 2 ) 1 .2 2 (.0 4 8 ) 6 .4 7 (.2 5 5 ) 6 .1 8 (.2 4 3 ) 1 5 .4 9 (.6 1 0 ) 1 4 .7 3 (.5 8 0 ) 5 .2 8 (.2 0 8 ) 4 .7 8 (.1 8 8 ) 1 .4 0 (.0 5 5 ) 1 .1 4 (.0 4 5 ) 3X 5 .0 8 (.2 0 0 ) 1 .3 9 (.0 5 5 ) 1 .1 4 (.0 4 5 ) 2 .7 9 (.1 1 0 ) 2 .2 9 (.0 9 0 ) 2 .6 1 (.1 0 3 ) 2 .3 2 (.0 9 1 ) 8 .8 9 (.3 5 0 ) REF. 1 0 .1 6 (.4 0 0 ) REF . 1 .7 8 (.0 7 0 ) 1 .2 7 (.0 5 0 ) 1 3 3X 0 .9 3 (.0 3 7 ) 0 .6 9 (.0 2 7 ) 0 .2 5 (.0 1 0 ) M BAM 0 .5 5 (.0 2 2 ) 0 .4 6 (.0 1 8 ) M IN IM U M R E C O M M E N D E D F O O T P R IN T 1 1 .43 (.4 5 0 ) NOTES: 1 D IM E N S IO N S A F T E R S O L D E R D IP . 2 D IM E N S IO N IN G & T O L E R A N C IN G P E R A N S I Y 1 4 .5 M , 1 9 8 2 . 3 C O N T R O L L IN G D IM E N S IO N : IN C H . 4 H E A T S IN K & L E A D D IM E N S IO N S D O N O T IN C L U D E B U R R S . L E A D A S S IG N M E N T S 1 - GATE 2 - D R A IN 3 - SOURCE 8 .8 9 (.3 5 0 ) 1 7 .7 8 (.7 0 0 ) 3 .8 1 (.1 5 0 ) 2 .0 8 (.0 8 2 ) 2X 2 .5 4 (.1 0 0 ) 2X WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 7321 Victoria Park Ave., Suite 201, Markham, Ontario L3R 2Z8, Tel: (905) 475 1897 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371 http://www.irf.com/ Data and specifications subject to change without notice.8/98 8 www.irf.com |
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